Bismuth-based layered and perovskite tantalates, titanates and niobates have received special attention as ferroelectric and dielectric materials. Sr1-xBaxBi2Ta2O9 (x = 0.0, 0.2, 0.5, 0.7, and 1) were synthesized using a chemical solution route. As revealed by X-ray diffraction studies, they make a complete solid solution for all values of x. Thin films were deposited by spin coating. Stoichiometric thin films were achieved on quartz and stainless steel substrates at a process temperature below 700 degreesC. Films were also characterized by Raman and impedance spectroscopy. The ferroelectric memory has been measured with Pr = 27 mum/cm(2) on the Sr0.3Ba0.7Bi2Ta2O9 film deposited on a stainless steel substrate and annealed at 650 degreesC.