In this paper we assume, like in Balint et al. [Mater. Sci. Semiconductor Process. V3/3 (2000) 115-121], that the melt/solid interface in the case of vertically stabilized Bridgman-Stockbarger semiconductor growth system is a thin layer, masking the cn;stal, where a weak form of the periodical structure of the crystal exists. In these conditions, using a new diffusion coefficient in the equation of the dopant transport in the interface region, we compute the axial and radial variation of the dopant field in this region for crystal and melt with thermophysical properties similar to the gallium-doped germanium. We compare the results to those obtained in Mater. Sci. Semiconductor Process. V3/3 (2000) 115-121 [1], where we have changed the diffusion coefficient only in the boundary condition for the dopant concentration at the melt/solid interface.