The segregation and incorporation coefficients of antimony (Sb) in Si1-xGex buried doped layers were investigated simultaneously using specific temperature sequences. We first showed an exponential kinetic evolution of Sb surface segregation in Si. In contrast such an evolution could not be observed in Si(1-x)G(x) because of the Sb thermal desorption, at growth temperatures of 550 degreesC. We also showed an increased surface segregation increasing with the partial Ge concentration in Si1-xGex alloys, which was explained by a decrease of the kinetic barrier for Sb atoms mobility. It was, therefore, possible to determine the growth conditions to obtain a Si1-xGex doped layer with a controlled incorporation level and a negligible surface segregation obtained by the thermal desorption of the Sb surface coverage. Finally, using Sb surfactant mediated growth, we found Ge dots with lateral sizes: reduced by a factor of 2.8 and density multiplied by a factor of four as compared to dots directly deposited on Si(001).