The influence of magnetic-field-induced tuning of the disorder on the line width of the lowest excitonic transition in diluted magnetic semiconductor (Zn, Cd, Mn)Se/ZnSe quantum well samples is studied by photoluminescence at 2 K and in magnetic fields up to 7.5 T. It is shown that the dependence of the photoluminescence line width on quantum well thickness can be explained as a sum of contributions of ZnSe barrier, (Zn, Cd, Mn)Se well and the interfaces.