Methods for depth profiling layered structures in the 10-100 nm range via ion beam analysis, such as Rutherford backscattering spectrometry, channeling, nuclear reaction analysis and elastic recoil detection analysis, are described in connection with ion-beam synthesized silicides (beta -FeSi2 TaSi2) and epitaxial regrowth of amorphous SiO2. Methods using implanted radioactive marker isotopes in nanometer thin films, such as perturbed angular correlation spectroscopy, will be sketched.