Dark current-voltage characteristic showed a rectifying behavior for the iron-silicide/silicon heterostructures formed by pulsed laser deposition of iron on n-type silicon(100) substrates heated to 600 degreesC. The polarity of the rectifier was reversed for the heterostructures formed at 800 degreesC. The photosensitivity measured between 300 nm and 1100 nm was higher for the heterostructures formed at 800 degreesC than those at 600 degreesC. Also, the illumination of the silicon side gave higher photosensitivity than that of the silicide side. There were peaks near a wavelength of 1000 nm. In particular, the FeSi2/Si heterostructures formed at 800 degreesC was the most sensitive (270 mA/W at a broad peak near 900 nm) with the spectrum extending from 400 nm to 1100 nm under the illumination of the silicon side. Open-circuit voltage, as well as short-circuit current density, was measured under AM 1.5, 100 mW/cm(2) illumination.