화학공학소재연구정보센터
Thin Solid Films, Vol.382, No.1-2, 34-38, 2001
Raman spectral study on the carbon nitride film synthesized on a nitridated diamond surface by nitrogen-arc-discharge-assisted laser ablation deposition
A diamond film was nitridated by low-energy nitrogen ion implantation. Raman spectrum shows beta -C3N4 phase was formed in the nitridated diamond surface. Carbon nitride film was grown on this nitridated diamond surface by nitrogen-arc-discharge-assisted laser ablation deposition. The structure of the synthesized film was characterized by Raman spectroscopy. A series of narrow Raman peaks were observed in the range of 150-1550 cm(-1). These peaks match well with the calculated Raman frequencies of beta -C3N4, revealing the formation of the beta -C3N4 phase.