We present amorphous silicon thin-film transistors on glass substrates deposited by hot-wire chemical vapor deposition with a high deposition rate of 17 Angstrom /s. The TFTs have a field-effect mobility of 0.4 cm(2)/Vs, and a high stability upon gate-voltage stress. Hot-wire silicon nitrides were developed. First TFTs incorporating this material as gate dielectric have a mobility of 0.6 cm(2)/Vs and a threshold voltage of 2.9 V.