Lightly boron-doped microcrystalline silicon (muc-Si:H) films with a low dark conductivity and a high photosensitivity are used for a systematic investigation of the steady-state (SSPC) and transient photoconductivity (TPC). We find that the photoelectronic properties are only determined by the crystalline components of this mixed-phase material but not by the residual amorphous silicon (a-Si:H). Nevertheless, the behaviour of SSPC and TPC are to a great extent similar to that of a-Si:H. This suggests that in muc-Si:H there is a similar distribution of gap states (band-tail states, dangling bonds) as in a-Si:H. The weak dependence of SSPC on the photon flux may be due to the presence of long-range potential fluctuations caused by inhomogeneously distributed charged defects.