Journal of the Electrochemical Society, Vol.146, No.5, 1879-1883, 1999
Diffusion of boron, phosphorus, arsenic, and antimony in thermally grown silicon dioxide
We studied the diffusion of dopant impurities, that is, ion-implanted boron, phosphorous, arsenic, and antimony in SiO2 and determined the diffusivity of the impurities in SiO2 using secondary ion mass spectrometry and a process simulator. We also revealed anomalous diffusion of the dopant impurities in SiO2.