화학공학소재연구정보센터
Journal of the Electrochemical Society, Vol.146, No.7, 2683-2688, 1999
Calculation of slip length in 300 mm silicon wafers during thermal processes
A simulation model to calculate a slip length during thermal processes was reposed on the basis of dislocation kinetics. The dislocation velocity was calculated from gravitational and thermal stresses. The slip length was calculated by integrating the dislocation velocity by the duration of thermal processes. It was found that the model could predict the slip length, the optimum ramping rate, and wafer spacing quantitatively with high accuracy for 300 mm wafers.