This paper reports results on an investigation of the influence of titanium film in interconnects on incomplete transistor annealing. Annealing damage may be impeded when titanium directly overlays transistors. This may be due to not only gettering of hydrogen by titanium films but also to retarding hydrogen diffusion of the interlayer between the gate electrode of transistors and the titanium-containing interconnects in boron phosphosilicate glass. The hydrogen diffusion coefficient in the boron phosphosilicate glass film was approximately 3 x 10(-10) cm(2)/s at 400 degrees C, which is three orders of magnitude smaller than that in the thermal oxide.