(Ba1-xSrx)TiO3 (BST) films were deposited on the new electrode structures of Pt/RuO2 + Ta/TiSi2/poly-Si/SiO2/Si (PRTS) and Pt/RuO2 + Ta/poly-Si/SiO2/Si (PRS) by metallorganic chemical vapor deposition. The films deposited on PRTS show smoother morphologies than those on PRS. Titanium-silicide (TiSi2) buffer layers formed on poly-Si play an important role in decreasing the roughness of each layer as well as contact resistance between RuO2 + Ta and poly-Si. The electrode structures showed a stable morphology after deposition of BST films and annealing at 750 degrees C. The 80 nm thick BST films deposited on PRTS showed a dielec tric constant of 240 and dissipation factor of 0.01 at 100 kHz. The BST films deposited on PRTS have a leakage current density of about 4.0 X 10(-7) A/cm(2) at 190 kV/cm and breakdown strength of 290 kV/cm.