A number of different plasma chemistries were examined for dry etching of thin film Ta2O5. Maximum etch rates of similar to 1200 Angstrom min(-1) were achieved with SF6 or Cl-2 discharges, while CH4/H-2/Ar and N-2/Ar produced rates an order of magnitude lower. The etch rates of Ta2O5 were always slower than those for Si under the same conditions in each of the different chemistries, and there was no effect of postdeposition annealing of the Ta2O5 on the resultant dry etch rates.