The fabrication of high performance dual gate complementary metal oxide semiconductor (CMOS) devices has been demonstrated by dopant implantation into a self-aligned CoSi2 layer, followed by a single drive-in annealing. By the optimization of polycrystalline Si (poly-Si) gate thickness and drive-in annealing conditions, it was shown that CMOS devices annealed at 900 degrees C with gate poly-Si of 200 nm thickness gives simultaneous formation of shallow junction and gate doping for both n-channel MOS and p-channel MOS with a single drive-in annealing. CMOS devices fabricated with this technology exhibit good junction characteristics. In particular, there is no degradation from silicidation, implantation-induce damage, gate dopant depletion, or boron penetration. Also, high reliability of the gate oxide and low sheet resistance of CoSi2 can be obtained. Therefore, it is suggested that simultaneous formation of shallow junction and gate doping using Co silicide as a dopant source is a promising technique For the Fabrication of high performance dual gate CMOS devices.