화학공학소재연구정보센터
Journal of the Electrochemical Society, Vol.146, No.10, 3872-3885, 1999
Planarization processes and applications - II. B2O3/P2O5 doped GeO2-SiO2 classes
Plasma enhanced chemical vapor deposition of boron and phosphorus eloped mixed GeO2-SiO2 glass films in a horizontal tube reactor using germane (GeH4), silane (B2H6), diborane (PH3), phosphine (PH3), and oxygen (O-2) has been studied. The glass films offer the potential for both trench refilling and interlevel dielectric applications. Film synthesis was carried out at 200 degrees C using a dual coil inductively coupled plasma system. Oxide film composition was determined using energy dispersive X-ray spectroscopy and Anger energy spectroscopy. Cross-sectional scanning electron microscopy was employed for studing the compositional dependency of. the reflow behavior of the mixed GeO2-SiO2, P2O5-GeO2-SiO2, B2O3-GeO2-SiO2, and P2O5-B2O3-GeO2-SiO2 glass films over silicon trenches under various ambient atmospheres. Reflow experiment?, were performed at temperatures ranging from 550 to 800 degrees C in various gas ambient atmospheres. As result of the work, a low temperature (similar to 600 degrees C) reflow process was developed resulting in fully planar dielectric films. This process may have application tor planarization of interlevel dielectrics for ultralarge scale integrated circuits.