Photocurrent measurements can provide an easy method for evaluating surface recombination velocity and for mapping this quantity over a silicon wafer. This method is validated for the characterization of Si-SiO2 interfaces by comparison with surface-state density data measured in simultaneously processed capacitors. In addition, destructive and nondestructive approaches to this measurement are discussed and compared. The correlation to be expected between destructive and nondestructive measurements of surface recombination is calculated by a theoretical model and experimentally verified. Finally, surface recombination velocity measurements are used for the characterization of oxidation equipment and processes.