Although germanosilicates with and without boron and phosphorus dopants have been shown to planarize over steps at temperatures below 800 degrees C, other properties of the films, such as water solubility, electrical conductivity, and mechanical stress, are also concerns with these materials. This study examines these film properties for undoped and boron- and/or phosphorus-doped germanosilicate glasses deposited by plasma-enhanced chemical vapor deposition. Water solubility resistance was improved for most film compositions after anneals in argon, steam, forming gas, or two-step anneals in argon and steam or argon and forming gas. Electrical leakage and breakdown behavior was also found to improve in steam anneals and even further in two-step argon-steam anneals but leakage increased following forming gas anneals, Mechanical stress was found to generally increase in magnitude following argon anneals, but stress levels were reduced again to near as-deposited values following a subsequent steam anneal. For the greatest improvement in properties, a two-step anneal, first in argon and subsequently in steam, is recommended.