In situ N-2-doping of 3C-SiC films during growth by chemical vapor deposition on Si(lll) substrates using single organosilane precursors [trimethylsilane (SiC3H9) and silacyclobutane (SiC3H8)] was investigated by Hall effect measurements, secondary-ion mass spectrometry (SIMS), and reflection Fourier transform infrared spectroscopy (FTIRS). The electron concentration in SiC films grown from trimethylsilane can be readily controlled by the N-2 flow rate. Reflection FTIRS study of the N-2-doping efficiency yielded results consistent with those from Hall effect and SIMS measurements. The doping efficiency in SiC films grown with silacyclobutane is much lower than that for films grown from trimethylsilane. The electrical properties of the n-type 3C-SiC films were investigated by Hall effect measurements from 80 to similar to 400 K. The highest electron mobilities at 83 and 300 K are 2115 and 333 cm(2)/V s, respectively. The corresponding carrier concentrations are 1 X 10(16) and 4 X 10(16) cm(-3)