The buffer layers of RuO2/Ru in pt/RuO2/Ru/poly-Si (polycrystalline silicon) structure were prepared by metallorganic chemical vapor deposition (MOCVD) and de magnetron sputtering.. The barrier layers of RuO2/Ru deposited by MOCVD showed a stable interface, and did not affect the surface morphology of the platinum bottom electrode even at a high annealing temperature of 800 degrees C. The barrier layers effectively prevented the interdiffusion of Pt, O, and Si at annealing temperatures above 700 degrees C in O-2 ambient. On the other hand, the barrier layers of RuO2/Ru formed by de sputtering showed severe intermixing and strongly influenced the platinum morphology at high temperature annealing. Contacts in Pt/MOCVD(RuO2/Ru)/poly-Si and Pt/dc sputtered (RuO2/Ru)/poly-Si structures showed the specific contact resistance of 5.0 X 10(-5) and 2.0 X 10(-3) Omega cm(2), respectively. The barrier layers of RuO2/Ru formed by MOCVD in Pt/RuO2/Ru/poly-Si structure were attractive for integration of high dielectric constant (Ba,Sr)TiO3.