Journal of the Electrochemical Society, Vol.147, No.12, 4665-4670, 2000
Recovery of tungsten from the exhaust of a tungsten chemical vapor deposition tool
An ETC DryScrub plasma scrubber has been successfully tested fur the capturing and recovery of metallic tungsten from the exhaust of a W chemical vapor deposition (CVD) tool. The scrubber operation was completely transparent to, the upstream CVD process. The WF6 destruction removal efficiency of the scrubber was determined with a quadrupole mass spectrometer. The system had been tested with two different plasma frequencies: 100 and 40 kHz. With the 100 kHz frequency, the destruction efficiency of WF6, reached an initial value of 98% at a nominal dissipated power of 1200 W. However, the layer of W deposited on the scrubber electrodes contained hydrates of tungsten oxides. Moreover the destruction efficiency of WF6, dropped to less than 70% after eight consecutively processed wafers ("memory effect"). introducing an intermediate H-2 plasma treatment ensured a continuously high efficiency, and improved significantly the purity of the deposited W layer in the scrubber. With the 40 kHz power supply, the maximum efficiency reached is more than 99% from a nominal dissipated power of 1100 W on. The purity of the deposited W layer is high (>99%). No memory effect was observed. Successful marathon runs have been performed with each tested frequency.