This paper describes the kinetics involved in the acid-based electroless Cu deposition system employing CuCl2-HNO3 chemistry in a HF-NH4F buffer solution. The rate equation is set up as a function of concentrations of active chemical components involved, and rate orders are determined to evaluate the contribution from each component. The deposition rate of Cu is found most sensitive to variation in [Cl-] concentrations, followed by that of [Cu2+] and [F-]. The activation energy derived from deposition at different temperatures is 0.445 eV. Grain size of deposited Cu films is influenced strongly by deposition rate. Electrical resistivity of Cu films is dominated by the amount of point defects and microvoids present right after deposition, and by grain size after a 300 degrees C anneal.