Current transport through mesa structures formed by Pt electroless deposition on p-Si wafers has been studied. The silicon treatment in the solution of sodium chloroplatinate in dilute HF acid is shown to result in both Pt nucleation on the Si surface (cathodic process) and Si wafer etching by fluoride ions (anodic process). These processes occur-red simultaneously, forming the developed Pt/Si interface. Auger electron spectroscopy and C-V curves reveal the formation of a dielectric interface laver between Pt and Si of hundreds of nanometers that extends with the time of treatment, The electrical properties of mesa structures exhibit Schottky barrier behavior. Both conditions of current transport along the deposited layer and parameters of Schottky contact are defined vs. the deposition time and compared with that for thermally deposited Pt contact.