(Ba1-x,Sr-x)(Ti1-y,Zr-y)O-3 thin films as the dielectric materials for gigabit-scale dynamic random access memory was deposited by radio frequency magnetron sputtering. The films with controlled compositions were grown from a single target by the control of chamber pressure. When chamber pressure decreased, the dielectric constant of films decreased due to an increase of Zr content. The (Ba1-x, Sr-x) (Ti1-y,Zr-y)O-3 thin films prepared in this study show a dielectric constant of 380 similar to 525 at 100 kHz. The films showed the decrease of leakage current as chamber pressure decreased and the leakage current density of films deposited above 10 mTorr was 10(-7) similar to 10(-8) A/cm(2) at 200 kV/cm. The dominant transport mechanism of films was the interface limited Schottky emission conduction. The (Ba1-xSrx)(Ti1-y,Zr-y)O-3 thin film appeared to be potential dielectric material for high density dynamic random access memory.