Silicon carbide films have been grown onto graphite substrates by low pressure chemical vapor deposition using MTS (CH3SiCl3) as a source precursor and H-2 or N-2 as a diluent gas. The experiments were performed at fixed conditions of a flow rate of 100 sccm for each MTS and carrier gas, a flow rate of 300 sccm for diluent gas addition, and a total pressure of 5 torr. The effect of temperature from 900 degrees C to 1350 degrees C and the alteration of diluent gas species on the growth rate and structure of deposits have been studied. The experimental results showed that the deposition rate increased with increasing deposition temperature irrespective of diluent gases and reactant depletion effect increased especially at H-2 diluent gas ambient. At MTS-H-2 system, the deposition mechanism changed from chemical reaction to mass transfer controlled reaction with temperature. Otherwise, For MTS-H-2-N-2 system, surface chemical reaction controlled the growth process at whole deposition temperature ranges. For N-2 addition, surface morphology of leaf-like structure appeared, and for H-2, faceted structure at 1350 degrees C. The observed features were involved by crystalline phase of beta-SiC and surface composition with different gas ambient.