화학공학소재연구정보센터
Journal of Materials Science, Vol.36, No.15, 3817-3823, 2001
Conduction mechanism in amorphous In-2(III) X-3(VI) thin films
Amorphous In-2(III) X-3(VI) films (X = Te or Se) are obtained by vacuum thermal evaporation of bulk materials on glass substrates. The current - voltage characteristics in the temperature range 298-378 K and in the thickness range 212-652 nm exhibited a transition from an ohmic region in the lower field followed by non-ohmic region in the high field region, which has been explained by the anomalous Poole-Frenkel effect. The temperature dependence of current in the ohmic region is of thermally activated process. The variation of dielectric constant with temperature is investigated for the two compounds.