In the present work crystallization behavior of the amorphous Se90-x Sb10Inx (0 less than or equal to x less than or equal to 15) system has been investigated using Differential Scanning Calorimetry (DSC). The DSC data was taken at different heating rates varying from 1 degreesC/min to 90 degreesC/min. From the heating rate dependence of the crystallization temperature, the activation energy for crystallization has been determined using the Kissinger equation and Matusitas equation for non-isothermal crystallization of materials. The effect of addition of In to the Se-Sb system on the dimensionality of crystal growth has been investigated.