Electrochimica Acta, Vol.45, No.28, 4673-4682, 2000
Formation and corrosion of InP/In contacts in hydrochloric acid
Flatband potentials, charge carrier concentrations and their frequency dispersions of p-type and n-type InP in 1.0 M HCl were determined. The cathodic decomposition of InP in this acidic solution is compared with the deposition process of indium from 1.0 M-HCl containing 0.1 M InCl3, The share of the involved reactions, hydrogen evolution, InP decomposition and indium deposition are investigated. The reaction rates are generally smaller on p-type InP and the reaction speed is much slower but the principal reactions are the same. The kinetics of the indium deposition and dissolution are studied in detail. These reactions are discussed in terms of the preparation of watersplitting photoelectrodes with modified surfaces.
Keywords:indium phosphide;semiconductor corrosion;indium deposition;Schottky barrier;watersplitting photoelectrode