Thin films of aluminum nitride (AlN) have been grown on (0001) oriented sapphire (alpha-Al2O3) substrates through the use of an externally applied electric field. By applying an electric field with an appropriate electrode material, at elevated temperatures, across Al2O3, a flux of Al3+ cations toward the cathode was induced. The cations arriving at the surface of the Al2O3 then reacted with a nitrogen gas atmosphere to form a thin epitactic film of AlN on the Al2O3.