Thin Solid Films, Vol.339, No.1-2, 294-298, 1999
The bistable switching property of a porous-silicon Schottky barrier diode during the charging period
A bistable switching property is displayed by a gold-plated porous silicon (PS) Schottky barrier diode. Charging the molecules attached on the walls of the PS underneath some depth during forward bias forming a p-p heterojunction within the PS ensuing a four-layer diode is the plausible mechanism.