In this study, the effects of multidipole type of magnets on the characteristics of the inductively coupled plasmas and SiO2 etch properties were investigated. As the magnets, four pairs of permanent magnets were applied and C2F6, CHF3, C4F8, H-2, and their mixtures were used to etch SiO2. When SiO2 was etched using the fluorocarbon gases, the significant increase of SiO2 etch rate and also the increase of etch uniformity could be obtained by applying the magnets. By optimizing the process parameters at 1000 W of inductive power with the magnets, the highest SiO2 etch rate of 800 nm/min with the SiO2: photoresist etch selectivity about 4 could be obtained for C4F8 and the highest etch selectivity more than 15 with the SiO2 etch rate of 400 nm/min could be obtained for C4F8/50% H-2.