The growth of thin Ti-oxide films (12 nm) on alumina substrate films formed by reactive evaporation of Ti in an oxygen atmosphere was studied by in situ internal stress measurements under ultra high vacuum conditions and transmission electron microscopy. Oxygen pressure and substrate temperatures were the varied parameters of the reactive evaporation. These Ti-oxide-films with different oxygen content (O-2/Ti-films) were then used as substrate films for the deposition of a clean titanium film. The growth stress of the titanium film on the as deposited O-2/Ti-substrate films is comparable with that previously found for H2O/Ti-substrates and indicates island growth and the formation of polycrystalline titanium films. Annealing (400 degrees C, 20 min) of the as-deposited -amorphous - O-2/Ti-films gives rise to the formation of crystalline TiO2. The amount of TiO2 formed during annealing is strongly dependent on the oxygen content of the O-2/Ti-film. The oxygen content in return, is dependent on oxygen partial pressure and substrate temperature during O-2/Ti-film deposition. The corresponding changes in the substrate film properties (oxygen content, crystallinity, etc.) are reflected in significant changes in the growth stress of the titanium film. The stress vs. thickness curve of these titanium films appears to indicate a superposition of the growth stress of two different,growth modes, i.e, growth of a polycrystalline film with island,growth on the as-deposited, amorphous oxide substrate and epitaxial growth of a quasi single crystalline film on the crystalline TiO2-substrate.