Amorphous (a-) indium-lin oxide (ITO) thin films were crystallized at ambient temperature by irradiation with KrF (248 nm) or ArF (193 nm) excimer laser pulses of greater than or equal to 40 mJ/cm(2) per pulse. Electrical resistivity of the specimen at similar to 300 K decreased from 5.9 x 10(-4) Omega cm to 2.7 x 10-4 st cm upon laser crystallization. This decrease was due to the increase in the carrier concentration which arises from the occupation of In3+ sites in the lattice with Sn4+ upon crystallization. Photo-imprinted Bragg gratings of crystalline ITO thin films were successfully fabricated by irradiation of a-ITO thin films with the excimer laser pulses through a silica phase mask and subsequent chemical etching of the irradiated thin films utilizing the large differences in the etching rate between crystallized and amorphous ITOs.