The hydrogenated silicon-carbon films were produced by excited helium-induced chemical vapour deposition (CVD) using trimethylchlorosilane (TMCS) as a single-source precursor. The effect of substrate temperature (T-s) on the deposition rate has been investigated. Chemical composition, optical and structural properties were explored using infrared (LR)-spectroscopy, ellipsometry, X-ray diffractometry and diffractometry of synchrotronous radiation. The electron spin resonance (ESR) method was used for detection of dangling bonds. The excited helium-induced CVD process made it possible to obtain the silicon carbide films from trimethylchlorosilane at T-s greater than or equal to 673 K characterised by the following properties: the films had the tendency to crystallise and exhibit the beta-SiC structure; the films are found to be optically homogeneous; their refractive index and optical gap coincide with the values of crystalline silicon carbide (n = 2.7, E-0 = 2.4 eV). The investigation of defects by the ESR method shows that the paramagnetism of films, obtained at T-s = 673 K, is caused by the dangling bonds on carbon. Kinetic studies have shown that the deposition process is controlled by the desorption of hydrogen from the surface of the growing film.