The electronic structure of InAs quantum dots in InP is fairly well known from theory as well as from experimental work using photocapacitance, DLTS and photoluminescence spectroscopy. Both electrons and holes are confined by more than 150 meV, allowing room-temperature luminescence from the quantum dots with emission around 1.5 mu m In this study we have investigated the temperature dependence of the emission from the dots and find an activation energy in this case was found to be about 110 meV.