This paper is devoted to ultraviolet responsivity control in Schottky barrier heterostructures based on GaAs and InP with textured interface. The influence of microrelief morphology and of its geometrical parameters on optical properties and photoresponse characteristics (spectral and polarization) has been investigated. Both random microrelief obtained by chemical anisotropic etching of semiconductor and microrelief of grating type formed by holographic etching were used. The optical and photoelectric characterization of heterostructures with textured interface allowed us to determine the most promising type of microrelief, and to define the mechanisms of the photosensitivity enhancement. Specifically, the role of surface polariton excitation as a mechanism of photoresponse increasing was treated.