A model for chemical vapor deposition (CVD) at or near atmospheric pressure is presented. A linear stability analysis of planar growth is presented and a dispersion relation is derived that relates species transport, surface diffusion, surface tension and geometrical factors with the growth of perturbations. Severe fingering requires a description with are-length as the independent variable. The finite element method is described to solve the evolution of the interface and of the gas-phase species concentration directly above the interface. Some examples are also given.