The influence of boron atoms on the growth of self-organized Ge quantum dots (QDs) on Si(100) substrate is studied by atomic force microscopy (AFM). The boron coverage varied from 0 monolayers (ML) to 0.3 ML. AFM observation shows that the boron atoms have a great influence on the size, uniformity and the density of Ge QDs. In the presence of 0.2 ML of boron atoms, the growth of quite uniform Ge QDs is achieved with a mean base diameter of 60 nm and areal density of 6 x 10(9) cm(-2). The mechanism of B atom influence on the growth of Ge QDs is discussed.