Epitaxial growth of Si and SiGe films on Si(100) substrates was examined using ion-beam sputtering technique. The critical epitaxial film thickness on Si homo-epitaxial growth was found to be thicker than that of the MBE grown films. This may be due to the bombardment effects by sputtered particles. Layer by layer growth was carried out by Si and Ge alternate sputtering. Although up to 600 degrees C, periodic structure was observed to be formed by XRD analysis, it disappeared at 700 degrees C because of interdiffusion. In situ B-doping of SiGe films was examined using a GeB target. Epitaxial growth was observed in spite of the fact that B was doped as heavy as 2.7 x 10(21) cm(-3). For the B-doped film a Hall mobility of 400 cm(2)/V s was obtained at a hole concentration of 4 x 10(17) cm(-3).