Thin Solid Films, Vol.369, No.1-2, 285-288, 2000
Non-equilibrium molecular orbital calculations of Si/SiO2 interfaces
A non-equilibrium statistical molecular orbital approach has been developed to analyze non-equilibrium configurations in Si/SiO2 heterostructures, improvement of which is essential for realization of superior semiconductor devices. The non-equilibrium statistics is discussed and results obtained in conjunction with molecular orbital calculations are being presented.