The experimental realization of a p-type Si/SiGe heterostructure metal oxide semiconductor field-effect transistor (HMOSFET) structure with a strained Si1-xGex graded well as the conducting channel is reported utilizing ultra-high-vacuum chemical vapor deposition (UHVCVD). The graded variation of the Ge fraction in channel can reduce the relaxation of strained SiGe epilayer. Simultaneously, rapid thermal oxidation (RTO) was used to obtain a high-quality thin-gate oxide films avoiding high thermal budgets which will cause the strain relaxation of graded Si1-xGex layer. The proposed device with a 0.5 x 100 mu m(2) gate exhibits a well-done transistor behavior. An extrinsic transconductance of 130 mS/mm at room temperature has been obtained.