Thin Solid Films, Vol.375, No.1-2, 91-94, 2000
Preferred orientation and ferroelectric properties of lead zirconate titanate thin films
Highly (111) oriented perovskite PZT thin films have been prepared by annealing FTS-deposited samples. The effects of the substrate temperature, sputtering power, annealing temperature and heating rate for annealing on the crystalline orientation were investigated. The sample prepared under the optimum condition showed excellent ferroelectric properties with P-r of 45 muC/cm(2) and P-s of 79 muC/cm(2).