The effects of remote hydrogen plasma pretreatment on the characteristics of copper films prepared by remote plasma chemical vapor deposition (RPCVD) using copper(I) hexafluoroacetylacetonate trimethylvinylsilane [Cu(hfac)(TMVS)] were studied at a pressure of 1 torr, substrate temperature of 200 degreesC, and plasma power of 100 W, When the remote hydrogen plasma pretreatment was employed, catalytic active points were observed on the surface of the pre-deposited 500-Angstrom thick TiN substrate. These active points reduced the incubation time required for the copper nucleation on the pre-deposited TiN substrate. Enhanced copper nucleation rates were observed on the hydrogen plasma pretreated TiN substrate owing to the high concentration of the reactive hydrogen species in the reaction zone, thereby enhancing the reduction reaction and leading to improved copper qualities and increased nucleation rates. The resistivity measurements of the films yielded film resistivities in the range of approximately 2,1 +/- 0.1 mu Omega cm for most samples,