A laser annealing technique was used to fabricate SrBi2Ta2O9 (SBT) thin films at a low temperature. Amorphous SET thin films were prepared on Pt/Ti/SiO2/Si substrates by a metalorganic decomposition (MOD) technique. A two-step process was used to crystallize the amorphous thin films: the films were annealed at 550 degreesC for 0.5 h to initiate the nucleation of the SET phase, and then annealed with a KrF excimer laser. X-Ray diffraction (XRD) patterns showed that the laser-annealed thin films were transformed into a SET perovskite structure without the presence of a second phase. The films irradiated by laser with a lower energy density and a greater pulse number had a better grain and a rougher surface.