Thin thermistor films of chemical composition Ni0.48Co0.24Cu0.6Mn1.68O4 were prepared by metal organic decomposition (MOD), Stock solution that was used for thin-film deposition was prepared by dissolving manganese (III) and nickel (II) acetylacetonates, cobalt acetate and copper nitrate in a mixture of methanol, ethylene glycol and acetic acid. Thin-films were fabricated by either dip-coating or spin-coating. Polycrystalline single-phase cubic spinel was obtained after annealing from 600 to 800 degreesC in air. Smooth and dense thin-films, free from cracks, were formed on aluminosilicate glass, however, the thin-film surface was irregular on fused silica, suggesting that the coefficient of thermal expansion of the substrate plays a crucial role in thin-film morphology. Electrical properties are strongly influenced by the annealing temperature: the resistivity and hopping activation energy vary from p((298 K)) = 9.75 Omega cm and E-H = 0.139 eV for films annealed at 600 degreesC to p((298 K)) = 1015 Omega cm and E-H = 0.247 eV for the films annealed at 800 degreesC. The Seebeck coefficient was negative for the films annealed at 600 and 650 degreesC and became positive for films annealed at higher temperatures. Electrical conduction was described in terms of small polaron hopping between Mn4+ and Mn3+ cations located in octahedral sites of the spinel structure. Changes of the electrical properties were attributed to the reduction of manganese Mn4+ --> Mn3+ during annealing at high temperatures.