Thin Solid Films, Vol.385, No.1-2, 252-254, 2001
High field electron trap generation and oxide breakdown in thin silicon dioxide layers
Electrical breakdown of thin silicon oxide layers subject to high electric field during constant current injection is studied, The correlation between charge-to-breakdown and electron trap generated inside of the oxides during electron injection is verified. This correlation is described in terms of oxide thickness and field dependencies observed during thin oxide breakdown.