The effects of the insertion of non-doped ZnO layers on the electrical properties of transparent conductive ZnO:Al films are investigated. Layered films of ZnO and ZnO:Al, ZnO:Al/ZnO films, were deposited by sputtering alternatively ZnO:Al and ZnO targets. By inserting ZnO layers in ZnO:Al layers, both the carrier concentration and Hall mobility were increased, and the film resistivity was lower than that of a single ZnO:Al film. Optical transmittance at the absorption edge was increased and grain growth was enhanced for the ZnO:Al/ZnO layered films. These data indicate that the insertion of ZnO in ZnO:Al decreased the defects in ZnO:Al/ZnO film which causes low carrier concentration and mobility