A CuInS2 based mini-module on a 5 X 5 cm(2) glass substrate with 9.2% efficiency is presented. It consists of 7 integrated series connected cells with a total area of 16.2 cm(2). The absorber layer has been grown by a sequential process consisting of sputtering the metals with subsequent sulphurisation in elemental sulphur vapour. The layer structure of the complete module is Mo/CuIn2/CdS/ZnO, which is the same that has been used for an 11.4% total area efficient single cell except for the top Ni/Al grid that only is applied to single cells. The module reaches the same open circuit voltage per cell as the single cell device does, but short circuit current and fill factor are still slightly smaller.