High rate reactive sputtering of heavily insulating dielectrics such as Si3N4 and TiO2 is a key requirement for economic production of complex coating designs. Two approaches for achieving enhanced deposition rates for TiO2 are contrasted. The use of closed loop process control through plasma emission monitoring has been demonstrated utilizing both DC and mid-frequency AC sputtering sources. Alternatively, high rate deposition of TiO2 has been demonstrated via deposition from a sub-stoichiometric ceramic TiO2 target, also utilizing DC and AC deposition. The use of mid-frequency AC is required to eliminate deposition non-uniformity due to insulating build up on anode surfaces. Data on deposition speeds, optical properties, long term deposition rate and uniformity stability are presented for both processes.