Hydrogenated amorphous carbon was deposited from CH2I2, by photolytical. decomposition. An excimer laser operated at 248 nm was used as the excitation source. Adherent and smooth coatings were obtained on silicon (100) substrates at room temperature. The deposition process was studied as a function of CH2I2 partial pressure, total pressure, laser pulse energy, and laser repetition rate. The deposition rate increased linearly with deposition time, and no incubation time was observed. The deposition rate dependence was linear for all process parameters investigated except for the highest partial pressure of CH2I2 and laser pulse energies. The deposited carbon films were characterized by atomic force microscopy, Raman spectroscopy, IR spectroscopy, energy-dispersive X-ray spectroscopy, and X-ray photoelectron spectroscopy. The hydrogen concentrations in the carbon films were investigated by elastic recoil detection analysis. The hydrogen and iodine content was 25 and 12-18 at.%, respectively. Growth rates up to 4.5 Angstrom /s were observed.